Preden Roulleau

Shot noise generated by graphene p-n junctions in the quantum Hall effect regime

N. Kumada1,2, F. D. Parmentier2, H. Hibino1, D. C. Glattli2, and Preden Roulleau2

1NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa, Japan.
2Nanoelectronics Group, Service de Physique de l’Etat Condensé, IRAMIS/DSM (CNRS UMR 3680), CEA Saclay, F-91191 Gif-sur-Yvette, France.

Unique transport properties of Dirac Fermions combined with quantum Hall physics lead to the mixing of chiral bipolar edge modes propagating along a graphene p-n junction, resulting in the quantization of the junction conductance at unusual fractional values. Here, we report on the experimental investigation of shot noise generated by such a p-n junction. Our results indicate that an out-of-equilibrium energy distribution arises in the junction due to mode mixing. We also show that this energy distribution relaxes towards a thermal equilibrium through interactions with external states, on a length scale of 16 μm. In shorter junctions, our findings are consistent with previous theoretical predictions, suggesting that a graphene p-n junction could be used as a beam splitter for electrons and holes.

figRoulleau.png
Figure 1: Schematic of the device. The top gate covers the right half of the graphene. In the ungated region, the carrier type is electron. In the gated region, the carrier type can be changed to hole by applying negative voltage VG. A source drain bias Vsd is applied to either 𝑪𝒊𝒏𝒆 or 𝑪𝒊𝒏𝒉 and the noise is measured on Cdet.
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